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InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(AIIN) 1-xP
InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(AIIN) 1-xP
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机译:具有InAsP量子阱层和Gax(AIIN)1-xP势垒层的InP基高温激光器
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摘要
The present invention provides a laser structure (100) that operates at a wavelength of 1.3µm and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (33) and a second barrier layer (34). Each barrier layer (33) (34) exhibits a higher bandgap energy than the quantum well layer (32). Also, each barrier layer (33) (34) comprises Gax(AlIn)1-xP in which x ≥ 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure (100).
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