METHOD FOR FORMING TENERAY DIFFUSION BARRIER IN COPPER ITNERCONNECTION

摘要

PURPOSE: A ternary system diffusion barrier layer formation method of a copper wire is provided to effectively prevent diffusion of copper at a high temperature by using a tantalum tungsten nitride(TaWN) layer of ternary system as a copper diffusion barrier layer. CONSTITUTION: A tantalum target(104) and a tungsten target(105) are mounted in a chamber(100) of PVD(Physical Vapor Deposition). Mixed gases of argon(Ar) and nitrogen(N) are supplied to the PVD chamber(100). Argon ions in argon plasma are collided with the tantalum target(104) and the tungsten target(105). By reacting the tantalum ions and the tungsten ions from the targets to the nitrogen gas, a tantalum tungsten nitride(TaWN)(108) of ternary system as a copper diffusion barrier layer is deposited on a wafer(101). Then, the densification processing and oxygen-filling processing of the TaWN(108) are performed.