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Photomask structures providing improved photolithographic process windows and methods of manufacturing the same
Photomask structures providing improved photolithographic process windows and methods of manufacturing the same
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机译:提供改进的光刻工艺窗口的光掩模结构及其制造方法
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摘要
Photolithographic methods for semiconductor manufacturing are provided wherein photomask structures are designed to provide increased lithographic process windows for printing sub-wavelength features. In one aspect, a photomask includes a mask substrate transparent to exposure light of a given wavelength, and a mask pattern formed on a surface of the substrate. The mask pattern comprises a printable element defined by a first and second critical edge, wherein the printable element includes an inner, non-printing feature formed between the first and second critical edges. The inner, non-printing feature is adapted to enhance image contrast at the first and second critical edges of the printable element for the given wavelength of exposure light during a photolithographic process. The non-printing feature comprises a space feature that exposes a region of the mask substrate aligned to the printable element between the first and second critical edges, and a trench feature that is formed in the mask substrate and aligned to the space feature.
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