Photodetectors with NEGATIVE held on the basis of semiconductor structures

摘要

1.u0444u043eu0442u043eu043fu0440u0438u0435u043cu043du0438u043a negative conduction through the semiconductor structure containing a semiconductor area with contacts, part of which x is connected among themselves, with one hand on the first area of the first type of conductivity, consistently located u043fu0435u0440u0432u0430u00a0 area of the second type u043fu0440u043eu0432u043eu0434u0438u043cu043eu0441u0442 and u0432u0442u043eu0440u0430u00a0 area first type conductivity.on the other hand on the first area of the first type of conductivity are sequentially u0432u0442u043eu0440u0430u00a0 area of second type conductivity and u0442u0440u0435u0442u044cu00a0 area of first type a conductance u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 so that the contact area of the second conductivity type is connected to the first contact of the third area, the first type of conductivity.a contact area of the second conductivity type is connected to the second contact of the second area of the first type of conductivity.;2. u0444u043eu0442u043eu043fu0440u0438u0435u043cu043du0438u043a on p.1, u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0, at first the first type of conductivity is located u0434u0438u044du043bu0435u043au0442u0440u0438u0447u0435u0441u043au0430u00a0 area on one side of which a first area (the first type u0440u043eu0432u043eu0434u0438u043cu043eu0441u0442u0438 consistently located u043fu0435u0440u0432u0430u00a0 area of second type conductivity and u0432u0442u043eu0440u0430u00a0 region of first type conductivity.and on the other side of the first area of the first type dielectric conductance consistently located u0432u0442u043eu0440u0430u00a0 area of second type conductivity etc. u0440u0435u0442u044cu00a0 region of first type conductivity.