首页> 外国专利> METHOD OF PRODUCTION OF CHARGE FOR GROWING MONOCRYSTALS ON BASE OF OXIDES OF RARE-EARTH METALS, TRACE METALS AND REFRACTORY METALS OR SILICON

METHOD OF PRODUCTION OF CHARGE FOR GROWING MONOCRYSTALS ON BASE OF OXIDES OF RARE-EARTH METALS, TRACE METALS AND REFRACTORY METALS OR SILICON

机译:基于稀土金属,痕量金属和难熔金属或硅的氧化物生产单晶电荷的方法

摘要

FIELD: chemical technology of composite materials.;SUBSTANCE: proposed method includes mixing of starting oxides at stoichiometric ratio of components, heating the mixture at rate of 30-350°C/h to temperature of 1460-1465°C and sintering at this temperature for 6.5-8.0 h. Mixing of starting oxides may be performed at application of vibrations at frequency of 50-100 Hz and amplitude of 3-5 mm. Synthesis is carried out in alundum sleeves on whose inner surfaces layer of gallium oxide is applied. Proposed method makes it possible to obtain the charge of homogeneous phase and stoichiometric composition. Yield of phase being synthesized is practically 100%.;EFFECT: enhanced efficiency.;3 cl, 3 tbl, 3 ex
机译:领域:复合材料的化学技术;物质:所提出的方法包括以组分的化学计量比混合起始氧化物,以30-350℃/ h的速度将混合物加热至1460-1465℃的温度,并在此温度下烧结持续6.5-8.0小时。起始氧化物的混合可以在施加振动时以50-100Hz的频率和3-5mm的振幅进行。合成是在刚玉套筒中进行的,在其上施加了氧化镓层。提出的方法使得可以获得均相和化学计量组成的电荷。合成相的收率实际上是100%。效果:提高了效率; 3 cl,3 tbl,3 ex

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