Production process for an n or p emitter layer in a semiconductor body of a high power component and such a layer deposits and dopes an amorphous silicon layer and heats to three hundred to four hundred degrees

摘要

A production process for an n- or p-emitter layer in a semiconductor body of a power or high-power component comprises depositing an amorphous silicon layer on a crystalline substrate, doping the silicon and heating to 300-400[deg] C. Preferably the doping is by depositing a metal layer on the silicon of by ion-implantation and the metal is preferably aluminum. An independent claim is also included for a p-emitter layer as above for an IGBT.