A gate controlled fin resistive element for use as an ESD protection element in an electrical circuit and an electrostatic discharge protection device in an electrical circuit

摘要

A gate-controlled fin resistance element for use as an ESD protection element in an electrical circuit has a fin structure, which fin structure has a first connection region, a second connection region and a channel region formed between the first and the second connection region. Furthermore, the gate-controlled fin resistance element has a gate region formed at least over part of the surface of the channel region. In one embodiment, the gate region is electrically coupled to a gate controller, which gate controller controls an electrical potential applied to the gate region, such that the gate controlled fin resistor element is high during a first operating state of the electrical circuit electrical resistance and during a second, characterized by the occurrence of the ESD event operating state has a lower electrical resistance. In an alternative embodiment, the gate region is electrically coupled to the second connection region, such that the fin gate controlled element exhibits low electrical resistance during a first operating state of the electrical circuit and during a second operating state characterized by the occurrence of an ESD event has a higher electrical resistance.