Voltage regulator for electrically erasable programmable ROM, has FET with source connected to inverter input and gate linked to inverter output, and band gap reference voltage source that predetermines voltage in which input is regulated

摘要

The regulator has an inverter comprising an inverter input (150) connected to a bit line and an inverter output (160). A field effect transistor (FET) has a feedback source connected to the input and a feedback gate connected to the output. A band gap reference voltage source predetermines a voltage in which the inverter input is regulated. An inverter transistor has an inverter gate, inverter source, and inverter drain, where the inverter gate is connected to the inverter input, and the inverter drain is connected to the inverter output, and the inverter source lies at ground (Vss). An independent claim is also included for a sense amplifier for reading out the state of a semiconductor memory cell via a bit line.