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Semiconductor device arrangement, has temperature measuring arrangement with temperature measuring resistor which is formed over part of semiconductor zone, where evaluation circuit is coupled to temperature measuring resistor

机译:半导体器件装置具有温度测量装置,该温度测量装置具有在半导体区域的一部分上形成的温度测量电阻器,其中评估电路耦合到温度测量电阻器

摘要

The arrangement has a trench-transistor with a gate electrode (11), a source-zone (6), a drain-zone (2) and a body-zone (5), where the body-zone is arranged in a semiconductor zone of conduction type. A temperature measuring arrangement has a temperature measuring resistor (13), which is formed over a part of the semiconductor zone, where an evaluation circuit is coupled to the temperature measuring resistor.
机译:该装置具有沟槽晶体管,该沟槽晶体管具有栅电极(11),源极区(6),漏极区(2)和体区(5),其中体区布置在半导体区中。导电类型。温度测量装置具有温度测量电阻器(13),该温度测量电阻器形成在半导体区域的一部分上,其中评估电路耦合到温度测量电阻器。

著录项

  • 公开/公告号DE102006005033A1

    专利类型

  • 公开/公告日2007-08-30

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20061005033

  • 发明设计人 SANDER RAINALD;ZUNDEL MARKUS;

    申请日2006-02-03

  • 分类号H01L23/62;H01L29/78;H01L27/06;G01K7/01;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:27

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