Silicon-doped layer manufacturing method for field effect transistor, involves forming semiconductor layer in recess to produce tensile strain in transistor channel region, and forming top coating on layer and silicon-doped layer on coating

摘要

The method involves forming a recess adjacent to a gate electrode (106) of a field effect transistor. A semiconductor layer is formed on the recess by selective epitaxial waxing for producing tensile strain in a channel region (111) of the transistor. The semiconductor layer is a silicon/carbon-layer with one atomic percentage of carbon. A top coating is formed on the semiconductor layer by depositing a silicon layer (108), and a silicon-doped layer is formed on the top coating by depositing a metal layer e.g. cobalt layer. An independent claim is also included for a field effect transistor with a source/drain layer and a channel region.