Semiconductor structure for use in smart power technology product, has deep trench isolation with meander-shaped course formed in control of bays such that one of diffusion areas is arranged in one of bays

摘要

The structure has an electrically insulated deep trench isolation (4) with a semiconductor substrate, and a single-crystal semiconductor layer that is arranged at the semiconductor substrate and a heavily doped buried layer (3). A set of low impedance contacts varies from a surface of the semiconductor layer till the buried layer is in the form of diffusion areas such as decreaser-contact. The deep trench isolation has a meander-shaped course formed in control of bays (8), such that one of the diffusion areas is arranged in one of the bays. An independent claim is also included for a method for manufacturing a semiconductor structure.