Production of silicon semiconductor crystals by floating zone process with seeding, core zone growth and main zone growth, involves changing pressure in growth chamber during process

摘要

The production of silicon semiconductor crystals (I) by the floating zone process comprises: (a) melting a silicon block; (b) fusing the block on a seed crystal; (c) growing a core zone and increasing its diameter in a chamber; and (d) growing a straight main zone while regulating its diameter to a required value, in which a pressure in the chamber is changed during the growth of the crystal.