首页>
外国专利>
Semiconductor structure with the use of sacrificial material and zugeörige production method
Semiconductor structure with the use of sacrificial material and zugeörige production method
展开▼
机译:使用牺牲材料和zugeörige生产方法的半导体结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device is provided. The semiconductor device includes a substrate having transistor devices and a plurality of copper interconnect metallization lines and conductive vias. The plurality of copper interconnect metallization lines and conductive vias are defined in each of a plurality of interconnect levels of the semiconductor device such that the plurality of copper interconnect metallization lines and conductive vias are isolated from each other by an air dielectric. The semiconductor device further includes a plurality of supporting stubs each of which is configured to form a supporting column that extends through the plurality of interconnect levels of the semiconductor device.
展开▼