首页>
外国专利>
integrated widerstandselement, phase change from speicherelement with such widerstandselement and its manufacture method
integrated widerstandselement, phase change from speicherelement with such widerstandselement and its manufacture method
展开▼
机译:集成宽台隔离,具有这种宽台隔离的特殊相变及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A vertical-current-flow resistive element (12) comprising a monolithic region (12) having a first portion (12a) and a second portion (12b) arranged on top of one another and formed by a single material. The first portion has a first resistivity, and the second portion (12b) has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion (12a) is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion (12a) than in the second portion (12b). Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation. IMAGE
展开▼