Specimen imaging method, involves depositing specimen on indirect-gap semiconductor substrate, energizing substrate with potential, and scanning specimen by melt point, where gap is greater than specific electron volts

摘要

The method involves depositing a specimen on an indirect-gap semiconductor substrate, and energizing the substrate with a potential. The gap is greater than 1.5 electron volts, and excitation energy of the specimen is lesser than the value of the gap. The specimen is scanned by a metal point at another potential such that a potential difference between the potentials allows the occurrence of a tunneling current between the substrate and the metal point. Photons are detected, and the substrate is made of beta silicon carbide or gallium phosphide. Independent claims are also included for the following: (1) an imaging device for implementing a photon-emission scanning tunnel imaging method (2) a semiconductor substrate for implementing a photon-emission scanning tunnel imaging method.