Schottky barrier MOS transistor production or fully depleted silicon-on-insulator type thin silicon film, involves filling dielectric layer in tunnel, and lateral etching of layer to subsist dielectric zone under gate region

摘要

The process involves depositing a layer made of silicon-germanium, on an active zone of a silicon substrate (Si). A gate region (5) is formed above a mono-crystalline silicon layer. The silicon-germanium is etched to form a tunnel under the gate region, and a dielectric, e.g. nitride and oxide mixture, layer is filled in the tunnel. The dielectric layer is laterally etched to subsist a dielectric zone under the region. A metal, e.g. platinum and erbium, is deposited at the location of source and drain regions to fill an etched zone of the dielectric layer. An independent claim is also included for a Schottky barrier metal oxide semiconductor (SBMOS) transistor.