METHOD FOR REDUCING RESET CURRENT FOR RESETTING A PORTION OF PHASE TRANSITION MATERIAL IN MEMORY CELL OF PHASE TRANSITION MEMORY DEVICE, AND PHASE TRANSITION MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for reducing a reset current of a memory cell of a phase transition memory device.;SOLUTION: This method comprises that at least a portion of the phase transition material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase easier than the first crystalline phase. For example, the first crystalline phase can be formed to a hexagonal closed packed structure, and the second crystalline phase can be formed to a face-centered cubic structure.;COPYRIGHT: (C)2008,JPO&INPIT