首页>
外国专利>
Buried self-sorting method and the memory array thereby made to form a semiconductor memory array of floating gate memory cells with the source line and the floating gate
Buried self-sorting method and the memory array thereby made to form a semiconductor memory array of floating gate memory cells with the source line and the floating gate
展开▼
机译:埋入式自分类方法及其存储阵列由此形成具有源极线和浮置栅极的浮置栅极存储单元的半导体存储阵列
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region.
展开▼