And encoding cell and its driving method of nonvolatile ferroelectric memory device, column repair circuit and the column repair method of nonvolatile ferroelectric memory device including a coded cell of the non-volatile ferroelectric memory device

摘要

A column repair circuit and method of a nonvolatile ferroelectric memory device can include: a memory test logic block capable of generating a redundancy active pulse (RAP) and a corresponding fail input/output (IO) number FIONr if a column address including a fail bit to be repaired is found during test; a power-up sensor capable of generating a power-up pulse if a stable power source voltage is sensed; a first redundancy control block capable of generating first to fifth control signals ENN, ENP, EQN, CPL, and PREC and a sixth control signal ENW in response to the RAP and the power-up pulse; a counter generating n bit counter bit signal increased by one bit through the RAP to correspond to the number of redundancy bits; a redundancy counter decoding control block capable of generating an activated coding signal ENWn in response to the counter bit signal of the counter and the sixth control signal ENW; and a redundancy coding block capable of coding a fail column address in response to the coding signal ENWn, the first to fifth control signals, the first and second address signals ADD and ADDB, and the fail IO number FIONr, and coding a fail IO bus.