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In the laser gas of the ArF excimer laser which the laser gas of the ArF excimer laser,

机译:在ArF准分子激光器的激光气体中,在ArF准分子激光器的激光气体中,

摘要

PROBLEM TO BE SOLVED: To obtain an ArF excimer laser capable of increasing pulse frequency without enlarging equipment, and an aligner using the high pulse frequency ArF excimer laser as a light source. SOLUTION: A semiconductor chip on a wafer is divided into a plurality of irradiation regions 46. Each of the regions is irradiated with a plurality of pulses of a laser light 11, one by one. When exposure of one irradiation region 46 is finished, the next irradiation region is exposed. Thus the whole part of the semiconductor chip is exposed. In this scanning type aligner 40, an ArF excimer laser 1 in which the main component of buffer gas in laser gas is He and preferably Xe is contained in the laser gas is used as a light source oscillating the laser light 11.
机译:要解决的问题:获得能够在不增加设备的情况下增加脉冲频率的ArF准分子激光器,以及使用高脉冲频率ArF准分子激光器作为光源的对准器。解决方案:晶片上的半导体芯片被划分为多个照射区域46。每个区域都被激光11的多个脉冲一个接一个地照射。当一个照射区域46的曝光完成时,下一照射区域被曝光。因此,半导体芯片的整个部分被暴露。在该扫描型对准器40中,作为使激光11振荡的光源,使用ArF准分子激光器1,其中激光气体中的缓冲气体的主要成分为He,并且优选在该激光气体中包含Xe。

著录项

  • 公开/公告号JP4023579B2

    专利类型

  • 公开/公告日2007-12-19

    原文格式PDF

  • 申请/专利权人 株式会社小松製作所;

    申请/专利号JP19990167999

  • 发明设计人 武久 究;堀 司;溝口 計;

    申请日1999-06-15

  • 分类号H01S3/225;G03F7/20;G03F7/23;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 20:17:37

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