SEMICONDUCTOR MEMORY DEVICE HAVING INPUT/OUTPUT SENSE AMPLIFICATION CIRCUIT WITH REDUCED JUNCTION LOADING AND CIRCUIT LAYOUT AREA

摘要

A semiconductor memory device includes an input/output sense amplifier that amplifies a read data and provides it to the external, when making a read operation. The semiconductor memory device includes a plurality of sense amplifiers that amplify data transferred from each bank and output them as amplified signals; a controller that judges the output states of the amplified signals in each sense amplifier to output driving signals corresponding to the output amplified signals; and a driver that drives an global input/output line with the driving signal, wherein the first and second sense amplifiers share the one driver, making it possible to reduce ‘tAA’ and get an advantage of a layout area.