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PHASE-CHANGE MEMORY DEVICE AND METHOD THAT MAINTAINS THE RESISTANCE OF A PHASE-CHANGE MATERIAL IN A SET STATE WITHIN A CONSTANT RESISTANCE RANGE
PHASE-CHANGE MEMORY DEVICE AND METHOD THAT MAINTAINS THE RESISTANCE OF A PHASE-CHANGE MATERIAL IN A SET STATE WITHIN A CONSTANT RESISTANCE RANGE
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机译:在恒定电阻范围内保持设定状态下相变材料的电阻的相变存储器件和方法
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摘要
Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a set state within a constant resistance range; In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical; If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell;
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