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METHOD FOR INCREASING PROGRAMMING SPEED FOR NON-VOLATILE MEMORY BY APPLYING DIRECT-TRANSITIONING WAVEFORMS TO WORD LINES
METHOD FOR INCREASING PROGRAMMING SPEED FOR NON-VOLATILE MEMORY BY APPLYING DIRECT-TRANSITIONING WAVEFORMS TO WORD LINES
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机译:通过将直接转换波形应用于字线来增加非易失性存储器的编程速度的方法
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摘要
Non-volatile storage elements are programmed using counter-transitioning waveform portions on neighboring word lines which reduce capacitive coupling to a selected word line. In one approach, the waveform portions extend between pass or isolation voltages of a boosting mode, which are applied during a programming pulse on the selected word line, and read voltages, which are applied when verify pulses are applied to the selected word line to verify whether the storage elements have been programmed to a desired programming state. The waveform portions reduce the net voltage change which is coupled to the selected word line. The selected word line can reach a reduced, steady state level sooner so that the verify pulses can be applied sooner, thus reducing the overall programming time.
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