Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)

摘要

Disclosed are methods of fabricating a memory cell structure. More specifically, a copper substrate, including but not limited to copper contacts and/or bit lines, can be formed within a metal-containing layer, for example. Optionally, one or more via openings can then be formed in an overlying dielectric layer to expose one or more of the copper contacts and/or bit lines. Copper sulfide material can be formed thereon. Alternatively, a portion of the exposed copper can be converted to copper sulfide (e.g., Cu₂S₂ or Cu₂S). The copper sulfide material can then be exposed to a vapor phase monomer to facilitate selective growth of a conducting polymer.