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Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
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机译:semiconductor锗氧化物在半导体器件中或半导体器件上的共沉积
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摘要
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.
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