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Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10 of thickness
Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10 of thickness
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机译:液晶显示装置,其中多晶中杂质浓度的深度分布的峰值的位置的变化在厚度的10%以内
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摘要
A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to the plural thin film transistors, and a drive circuit area disposed at a periphery of the substrate and having a drive circuit for driving the plural thin film transistors. The thin film transistor has a polycrystalline silicon semiconductor layer formed on the substrate, a gate electrode formed on the polycrystalline silicon semiconductor layer with a gate insulating film interposed therebetween, an insulating film to cover the polycrystalline silicon semiconductor layer, the gate insulating film and the gate electrode, a drain electrode formed on the insulating film and electrically connected to the polycrystalline silicon semiconductor layer, and a source electrode formed on the insulating film, spaced from the drain electrode and electrically connected to the polycrystalline silicon semiconductor layer. The unevenness of a surface of the polycrystalline silicon semiconductor layer is within 10% of a thickness of the polycrystalline silicon semiconductor layer.
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