METHOD OF FABRICATING REDUCED SUBTHRESHOLD LEAKAGE CURRENT SUBMICRON NFET'S WITH HIGH III/V RATIO MATERIAL

摘要

A method of fabricating an enhancement mode semiconductor device (50) comprises providing a compound semiconductor substrate (12), epitaxially growing on the substrate a first portion (14) of a buffer (11), the first portion (14) including gallium arsenide (GaAs), growing a second portion (15) of the buffer, the second portion (15) including a high V/III ratio and high aluminum (Al) mole fraction aluminum gallium arsenide (AlGaAs), and epitaxially growing a stack (10) of compound semiconductor layers on the buffer (11). An enhancement mode semiconductor device is then formed in the stack.