VPP DETECTING CIRCUIT AND VPP PUMPING DEVICE WHICH INCLUDES THE VPP DETECTING CIRCUIT

摘要

A high voltage sensing circuit and a high voltage pumping device including the same are provided to prevent fail of a memory device by coping with the increase of a threshold voltage of a cell transistor at low temperature, by generating a higher high voltage at low temperature. A first pullup driving part(PS21) performs pullup driving of a first node(C) to a high voltage level in response to an internal voltage. A first resistor part(RS1) is inserted between the first pullup driving part and the first node. A first pulldown driving part(N21) performs pulldown driving of the first node in response to the signal of the first node. A second pullup driving part(PS2) performs pullup driving of a second node(D) to a core voltage level in response to a ground voltage. A second resistor part(RS22) is inserted between the second pullup driving part and the second node. A second pulldown driving part(N22) performs pulldown driving of the second node in response to the signal of the first node.