Data strobe signal generator for generating data strobe signal based on adjustable preamble value and semiconductor memory device with the same

摘要

This is a data strobe signal generator and this invention for generating a data strobe signal on the basis of the preamble adjustable value relates to a semiconductor memory device comprising, a data strobe signal generator according to the invention comprises control unit, the pulse delay unit, the clock generator, and a data strobe output. The control unit in response to the mode register set signal, the extended mode register set signal, and the address signal, and generates a signal with a preamble signal Cas latency. And a pulse delay unit Cas latency signal, in response to the preamble signal, the pulse signal is delayed for the time set, and outputs a delay pulse signal. A clock generator, in response to the preamble signal and the internal clock signal, and generates a control clock signal. In response to the strobe data output unit delay clock pulse signal and the control signal, and outputs the data strobe signal. The semiconductor memory device including a data strobe signal generator and the same according to the present invention by generating a data strobe signal based on the adjustable preamble value, can be ensured and stable operation of high-speed semiconductor memory device outputs data.