METHOD FOR PREPARING V2O5 NANOWIRE FILM AND THE V2O5 NANOWIRE FILM PREPARED THEREFROM

摘要

A method for fabricating a V2O5 nano-wire thin film is provided to be used in a nano conductive wire of a semiconductor circuit and a high-density V2O5 film for a secondary battery by enabling fabrication of a uniform V2O5 nano-wire thin film of a high density. A V2O5 nano-wire solution is diluted in water and is put into a Langmuir-Blodgett trough. After a halogenated DODAX(dioctadecyldimethyl ammonium X) solution is diluted in an organic solvent and is deposited on the surface of the V2O5 nano-wire solution of the Langmuir-Blodgett trough. The interfacial pressure of the halogenated DODAX solution is adjusted by using a barrier installed in the Langmuir-Blodgett trough. After a substrate is fixed to a dipping arm of the Langmuir-Blodgett trough, the substrate comes in contact with the interface of the halogenated DODAX solution wherein the substrate can be a stamp on which a patterned polymer layer is stacked. After the substrate is separated from the dipping arm, a heating process is carried out.