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IN-SITU ENDPOINT DETECTION AND PROCESS MONITORING METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING
IN-SITU ENDPOINT DETECTION AND PROCESS MONITORING METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING
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机译:化学机械抛光的原位终点检测和过程监测方法及装置
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摘要
A chemical mechanical polishing apparatus has a polishing pad (30), a carrier (70) to hold a substrate (10) against a first side of the polishing surface, and a motor coupled to at least one of the polishing pad (30) and carrier head (70) for generating relative motion therebetween. An eddy current monitoring system (40) is positioned to generate an alternating magnetic field in proximity to the substrate (10), an optical monitoring system (140) generates a light beam and detects reflections of the light beam from the substrate (10), and a controller (90) receives signals from the eddy current monitoring system (40) and the optical monitoring system (140).
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