Method for the deposition of layers in a process chamber used in the production of electronic components comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom

摘要

Method for the deposition of layers containing a first component on a substrate in a process chamber comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom. A limiting agent is simultaneously fed into the chamber with the first starting material. The deposition of the first component on the substrate automatically stops after closing the first layer. The limiting agent contains octane, butylacetate, tetrahydrofuran, methanol, ethanol, isobutylamine, triethylamine, butanol, cyclohexane, iso-octane, dioxane, dimethylformamide, pyridine and/or toluene.