首页> 外国专利> method for the treatment nichtgesputterter areas of pvd target constructions in the training of partikelfallen and pvd target constructions with columns along a nichtgesputterten area

method for the treatment nichtgesputterter areas of pvd target constructions in the training of partikelfallen and pvd target constructions with columns along a nichtgesputterten area

机译:沿着尼古斯帕特滕地区的立柱训练pikedfallen和pvd目标建筑的过程中,处理pvd目标建筑尼古斯城的地区的方法

摘要

The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the particle-trapping features can comprise a pattern of bent projections forming receptacles, and can comprise microstructures on the bent projections. The targets can be part of target/backing plate constructions, or can be monolithic. The invention also includes methods of forming particle-trapping features along sidewalls of a sputtering target or along sidewalls of a target/backing plate construction. The features can be formed by initially forming a pattern of projections along a sidewall. The projections can be bent and subsequently exposed to particles to form microstructures on the bent projections.
机译:本发明包括具有非溅射区域(例如,侧壁)和沿着非溅射区域形成的颗粒捕获特征的PVD靶。在特定方面,颗粒捕获特征可包括形成容器的弯曲突起的图案,并且可包括在弯曲突起上的微结构。靶可以是靶/背板构造的一部分,或者可以是整体的。本发明还包括沿溅射靶的侧壁或沿靶/背板构造的侧壁形成颗粒捕获特征的方法。可以通过首先沿侧壁形成突起的图案来形成特征。突起可以被弯曲并且随后暴露于颗粒以在弯曲的突起上形成微结构。

著录项

  • 公开/公告号DE60321202D1

    专利类型

  • 公开/公告日2008-07-03

    原文格式PDF

  • 申请/专利权人 HONEYWELL INTERNATIONAL INC.;

    申请/专利号DE20036021202T

  • 发明设计人 KIM JAEYEON;

    申请日2003-07-11

  • 分类号C23C14/34;

  • 国家 DE

  • 入库时间 2022-08-21 19:47:38

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