首页> 外国专利> PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM

PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM

机译:压电薄膜,压电材料,压电薄膜和压电材料的制造方法,以及使用压电薄膜的压电,致动器元件和物理传感器

摘要

PPROBLEM TO BE SOLVED: To provide a piezoelectric thin film, including an aluminum nitride thin film, which improves a piezoelectric response. PSOLUTION: A piezoelectric thin film includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 to 50 atom% on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom%. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has. PCOPYRIGHT: (C)2009,JPO&INPIT
机译:

要解决的问题:提供包括氮化铝薄膜的压电薄膜,其改善压电响应。

解决方案:压电薄膜包括包含scan的氮化铝薄膜。假设of原子数与铝原子数的合计为100原子%,则氮化铝薄膜中的content的含有率为0.5〜50原子%。根据这种布置,本发明的压电薄膜可以在保持氮化铝薄膜具有的弹性波传播速度,Q值和频率-温度系数的特性的同时改善压电响应。

版权:(C)2009,日本特许厅&INPIT

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