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METHOD OF MANUFACTURING TENSILE-STRAINED GERMANIUM THIN FILM, TENSILE-STRAINED GERMANIUM THIN FILM, AND MULTILAYER FILM STRUCTURE
METHOD OF MANUFACTURING TENSILE-STRAINED GERMANIUM THIN FILM, TENSILE-STRAINED GERMANIUM THIN FILM, AND MULTILAYER FILM STRUCTURE
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机译:拉伸拉伸锗薄膜的制造方法,拉伸拉伸锗薄膜的制造以及多层膜结构
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摘要
PROBLEM TO BE SOLVED: To provide a multilayer film structure in which relaxation of strain of a germanium tin mixed crystal layer is promoted and a tensile-strained germanium layer with a larger in-plane tensile strain can be formed.;SOLUTION: The method of forming a suitable multilayer film structure 10 on a semiconductor device includes the step of forming a germanium layer 12 over a silicon substrate 11, forming a germanium tin mixed crystal layer 13 over the germanium layer, and forming a tensile-strained germanium layer 14 over the germanium tin mixed crystal layer.;COPYRIGHT: (C)2009,JPO&INPIT
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