Until the metal membrane suffering lets flow

摘要

PROBLEM TO BE SOLVED: To perform a heat treatment with superior productivity while generation of oxide on the surface of a metal film is restrained.;SOLUTION: A plurality of semiconductor wafers on which the metal films are stuck as electrodes are set in a crystal cassette or the like and put in an oven furnace, and nitrogen gas is made to flow in the furnace at a room temperature. After oxygen concentration in the furnace reaches several ppm which is the concentration of the oxygen contained in the nitrogen gas, hydrogen gas is introduced in the furnace, and oxygen concentration in the atmosphere is made at most 1 ppm. In the state, the temperature of the furnace is increased and held at a prescribed heat treatment temperature, and a heat treatment is performed. When the temperature of the furnace falls down near the room temperature, supply of the hydrogen gas is stopped. After the inside of the furnace is replaced by 100% nitrogen gas, the wafers are taken out.;COPYRIGHT: (C)2004,JPO