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Rewriting a rewritable nonvolatile memory, electronic equipment, and a rewritable nonvolatile memory, and rewriting the program
Rewriting a rewritable nonvolatile memory, electronic equipment, and a rewritable nonvolatile memory, and rewriting the program
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机译:重写可重写非易失性存储器,电子设备和可重写非易失性存储器,并重写程序
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摘要
A rewritable, nonvolatile memory includes a first region having stored therein a processing program which allows an electronic device to perform a process, and having a first specific portion which is accessed first upon boot-up by the electronic device; and a second region having stored therein a boot program and a rewrite program. Upon erasing storage contents of the first region, the storage contents of the first region are erased by the rewrite program such that a storage content of the first specific portion is erased last. Upon writing storage contents into the first region, new storage contents are written into the first region by the rewrite program such that a storage content of the first specific portion is written first.
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