Production method of AlGaAs-based semiconductor laser, manufacturing methods and compound semiconductor growth method of AlGaAs-based semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a compound semiconductor which can reduce the reevaporation of In from a growth layer and can get a growth layer favorable in surface morophogy, in the case of growing a compound semiconductor including In and not including Al. ;SOLUTION: In an AlGaAs semiconductor laser which has a distorted quantum well structure of active layer, an Al-doped GaInAs active layer 4 is used as an active layer. The Al-doped GaInAs active layer 4 is made by performing the growth of GaInAs so as to be doped with Al by mixing TMA as a second material including Al into the first material consisting of TMG(trimethyl gallium), TMIn, and AsH3 used for the growth of GaInAs. The supply quantity of TMA(trimethyl aluminum) and the supply ratio of TMA(trimethyl aluminum) to TMG(trimethyl gallium), TMIn, and AsH3 are controlled so that the concentration of Al in the Al-doped GaInAs active layer 4 may be 1×1018/cm3 or over and that the composition ratio of the Al in the Al-doped GaInAs active layer 4 may be 0.1 or under.;COPYRIGHT: (C)2000,JPO