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POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES
POLARITY INVERSION OF TYPE-II InAs/GaSb SUPERLATTICE PHOTODIODES
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机译:II型InAs / Gasb超晶格光电二极管的极性反转
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摘要
The subject invention comprises the realization of P-on-N type II InAs/GaSb superlattice photodiodes. A high-quality InAsSb layer lattice-mismatched to GaSb is used as a buffer to prepare the surface of the substrate prior to superlattice growth. The InAsSb layer also serves as an effective n-contact layer. The contact layer has been optimized to improve device performance, most notably performance that is similar to traditional N-on-P structures.
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