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Method for eliminating duo loading effect using a via plug

机译:使用通孔插头消除二重奏加载效果的方法

摘要

Method for eliminating loading effect using a via plug. According to an embodiment, the present invention provides a method of processing an integrated circuit wherein a loading effect is reduced. The method includes a step for providing a substrate, which is characterized by a first thickness. The method also includes a stop for forming an inter metal dielectric layer overlaying the substrate. The inter metal dielectric layer is characterized by a second thickness. The method additionally includes a step for forming a first photoresist layer overlaying the inter metal dielectric layer. The first photoresist layer is associated with a first pattern. Additionally, the method includes a step for forming a first opening positioned at least partially inside the inter metal dielectric layer. The first via opening is characterized by a first depth. The method additionally includes a step for removing the first photoresist layer. The method further includes a step for forming a via plug.
机译:使用通孔插头消除负载影响的方法。根据一个实施例,本发明提供一种处理集成电路的方法,其中减小了负载效应。该方法包括提供衬底的步骤,该衬底的特征在于第一厚度。该方法还包括用于形成覆盖衬底的金属间介电层的挡块。金属间介电层的特征在于第二厚度。该方法还包括形成覆盖金属间介电层的第一光刻胶层的步骤。第一光致抗蚀剂层与第一图案相关联。另外,该方法包括用于形成至少部分地位于金属间电介质层内部的第一开口的步骤。第一通孔开口的特征在于第一深度。该方法还包括去除第一光刻胶层的步骤。该方法还包括用于形成通孔塞的步骤。

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