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High electron mobility transistor with mesa structure and reduced gate leakage current

机译：具有台面结构并降低了栅极泄漏电流的高电子迁移率晶体管

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摘要

The semiconductor device (10) comprises a semiinsulating substrate (12), a layered structure (20) of compound semiconductor which is a mesa structure (18) and contains an active channel layer (14), a first and a second metal main electrodes (22a, 22b) which are provided on the layered structure (20), a first and a second ion implantation regions (40a, 40b) which are provided at the depth level below the active channel layer, and a metal control electrode (26) which is provided along the channel width direction from the first ion implantation region to the second ion implantation region, crossing over the upper side of the active channel layer.

机译：半导体器件（ 10 ）包括半绝缘衬底（ 12 ），化合物半导体的层状结构（ 20 ），其为台面结构（ 18 ），并包含一个有源沟道层（ 14 ），一个第一和第二金属主电极（ 22 a ，22 b ）分别位于层结构（ 20 ），第一和第二离子注入区（ 40 a ，40 b ）和金属控制电极（< B> 26 ），其从第一离子注入区域到第二离子注入区域沿着沟道宽度方向设置，并跨越有源沟道层的上侧。 展开▼

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公开/公告号US7608864B2

专利类型

公开/公告日2009-10-27

原文格式PDF

申请/专利权人 SHINICHI HOSHI;TOMOYUKI OHSHIMA;HIRONOBU MORIGUCHI;
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申请/专利号US20050040016

发明设计人 TOMOYUKI OHSHIMA;SHINICHI HOSHI;HIRONOBU MORIGUCHI;
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申请日2005-01-24

分类号H01L29/778;

国家 US

入库时间 2022-08-21 19:31:28

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1. 一种具有MIS栅极结构的GaN增强型高电子迁移率晶体管 [P] . 中国专利： CN215896408U . 2022-02-22

2. 具有在栅极结构中的掺杂的半导体区的高电子迁移率晶体管 [P] . 中国专利： CN113257899A . 2021-08-13

3. High Electron Mobility Transistor having Reduced Gate Leakage Current [P] . 韩国专利： KR101935928B1 . 2019-01-07

机译：降低栅极漏电流的高电子迁移率晶体管

4. High Electron Mobility Transistor having Reduced Gate Leakage Current [P] . 韩国专利： KR20180106026A . 2018-10-01

机译：降低栅极漏电流的高电子迁移率晶体管

5. HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A DRAIN SURROUNDED BY A GATE CAPABLE OF REDUCING A LEAKAGE CURRENT [P] . 韩国专利： KR20120035046A . 2012-04-13

机译：高电子迁移率晶体管，包括可降低漏电流的门周围的漏极

1. 1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition [J] . GAO Cheng, LI Hai-ou, HUANG Jiao-ying, 中南大学学报（英文版） . 2012,第012期

2. Reduced Reverse Gate Leakage Current for p-GaN Gate High-Electron-Mobility Transistors by a Surface-Etching Method [J] . Chi Sun, Xiaoyu Ding, Xing Wei, Physica status solidi (a) Applications and materials science . 2021,第8期

3. Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors [J] . Kim S., Ryou J.-H., Dupuis R.D., Electronics Letters . 2016,第2期

4. Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation [J] . Kazuo Hayashi, Yutaro Yamaguchi, Toshiyuki Oishi, Japanese journal of applied physics . 2013,第4Issue2期

5. Reduction of Buffer Leakage Current in AlGaN/GaN High-Electron-Mobility-Transistor Structure on Si Substrate by Reducing the Dislocation Density in AlN Buffer Layer [C] . Yasuhiro Oda, Noriyuki Watanabe, Masanobu Hiroki, European Microwave Integrated Circuits Conference . 2007

6. Development of iridium-based gate structure for indium aluminum arsenide/indium gallium arsenide/indium phosphide enhancement-mode and depletion-mode high electron mobility transistors [D] . Kim, Seiyon 2005

7. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure [O] . Zhonghao Sun, Huolin Huang, Nan Sun, 2019

8. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress [O] . Montes Bajo, M., Hodges, C., Uren, M. J., 2012

9. Threshold Voltage Improvement and Gate Leakage Current Reduction in a Multi-dot Room Temperature Operating Single Electron Transistor (RT-SET) [R] . Acharya, M., Cheam, D. D., Karre, P. S., 2008

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