RELAXED SiGe LAYERS ON Si OR SILICON-ON-INSULATOR SUBSTRATES BY ION IMPLANTATION AND THERMAL ANNEALING

摘要

A method of for obtaining thin (less than 300 nm) strain easily Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrate. These buffer layers, which have, mitigates strain, and significantly the one of the misfit dislocation of smooth surface is uniformly distributed, and a low thread shape difference arranges (TD) density, that is, is less than 106cm2. Method start from an illusion without misfit dislocation or Si1-xGex layers of nearlypseudomorphic, i.e., then one layer of growth passes through him and is implanted or other light elements and a large amount of stress relaxation of realization with after annealing. Effective strain relaxation mechanism operatiing with the method is the dislocation nucleation in his inducedplatelets (not bubble), is located parallel to below the Si/Si1-xGex interfaces on Si (001) surface.