ZnO SUBSTRATE, METHOD FOR PROCESSING ZnO SUBSTRATE, AND ZnO SEMICONDUCTOR DEVICE

摘要

Disclosed are a ZnO substrate having a surface of good quality suitable for crystal growth, a method for processing a ZnO substrate, and a ZnO semiconductor device. The ZnO substrate is so formed as to have generally no carboxyl group or carbonate group in a major surface on the crystal growth side. In order to have generally no carboxyl group or carbonate group present, the ZnO substrate surface is brought into contact with oxygen radicals, oxygen plasmas or ozone before the crystal growth is started. Consequently, cleanness of the ZnO substrate surface is enhanced, thereby enabling formation of a ZnO thin film of good quality on the substrate.