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A method for manufacturing hydrogen sensors by using Pd nano wire

机译:利用钯纳米线制造氢传感器的方法

摘要

The method for producing hydrogen sensor is provided with a Pd nanowires. ; The present invention the step of forming the external electrode pattern onto the substrate; After applying the resin layer on the substrate, the resin layer forming a nano channel pattern; After the nano-channel using a sputtering on a substrate formed by depositing Pd, by removing the resin layer for forming the Pd nanowires process; After applying the resin layer on the Pd nanowires formed substrate, forming a pattern on a resin layer between each of the predetermined position between the outer end portions of the electrode pattern and the Pd nanowires, and both ends of the external electrode pattern with Pd nanowires process; And depositing a conductive metal on the pattern after the resin layer is formed, the resin layer pattern step of electrically connecting the Pd nanowires and the external electrode pattern by removing; a hydrogen sensor manufacturing method using the Pd nanowires, including relates.
机译:氢传感器的制造方法具备Pd纳米线。 ;本发明的步骤是在基板上形成外部电极图案。在基板上涂覆树脂层后,树脂层形成纳米通道图案;在通过溅射在纳米通道上通过沉积Pd形成的基板上之后,通过去除用于形成Pd纳米线的树脂层的工艺;在形成有Pd纳米线的基板上涂布树脂层之后,在电极图案的外端部与Pd纳米线之间的各规定位置与外部电极图案的两端之间的具有Pd纳米线的树脂层上形成图案。处理;在形成树脂层之后,在图案上沉积导电金属,树脂层图案步骤是通过去除将Pd纳米线和外部电极图案电连接;本发明涉及一种使用Pd纳米线的氢传感器的制造方法。

著录项

  • 公开/公告号KR100870126B1

    专利类型

  • 公开/公告日2008-11-25

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060135209

  • 发明设计人 이우영;전계진;이은송이;

    申请日2006-12-27

  • 分类号G01N27/12;G01N27/30;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:22

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