METHOD OF FABRICATING A SEMICONDUCTOR DEVICE REDUCING A THERMAL BUDGET ON IMPURITY REGIONS OF A PERIPHERAL CIRCUIT REGION

摘要

A method for manufacturing a semiconductor device for reducing a thermal budget to impurity regions of a peripheral circuit region is provided to improve characteristics of the semiconductor device by forming a peripheral transistor after performing a high-temperature process. A substrate(110) including a cell array region and a peripheral circuit region is prepared. The cell array region includes a cell activation region(112c). The peripheral circuit region includes peripheral activation regions(112a,112b). A cell gate pattern(126a) and a peripheral gate pattern(126b) are formed across the cell activation region and the peripheral activation region. A plurality of first cell impurity regions(130c) are formed in the cell activation regions of both sides of the cell gate pattern. A cell bottom interlayer dielectric(136) and a peripheral insulating layer are formed on the substrate in order to cover the cell array region and the peripheral circuit region, respectively. A plurality of cell conductive pads(144c) are formed through the cell bottom interlayer dielectric in order to be electrically connected with the first cell impurity regions. The peripheral insulating layer is removed to expose the peripheral activation regions of both sides of the peripheral gate pattern.