首页> 外国专利> METHOD FOR FABRICATING Ag DOPED Te-BASED NANO-MATERIALS USING A PULSE LASER ABLATION AND VAPOR-LIQUID-SOLID METHOD, AND A MEMORY DEVICE USING THE SAME

METHOD FOR FABRICATING Ag DOPED Te-BASED NANO-MATERIALS USING A PULSE LASER ABLATION AND VAPOR-LIQUID-SOLID METHOD, AND A MEMORY DEVICE USING THE SAME

机译:脉冲激光烧蚀和气液固相法制备掺Ag的Te基纳米材料的方法以及使用该方法制备的存储器

摘要

PURPOSE: A method for fabricating Ag doped Te-based nano-materials using a pulse laser ablation and vapor-liquid-solid method is provided to facilitate the growth of Ag doped Te-based nano-materials on a normal substrate.;CONSTITUTION: A method for fabricating Ag doped Te-based nano-materials comprises the following steps of: preparing an ablation chamber with a Te-based bulk target mounted therein(S210); irradiating an energy beam to the Te-based bulk target to generate the Te-based nanoparticles(S220); supplying carrier gas into the ablation chamber and transferring the generated Te-based nanoparticles to a thermal-treating unit where Ag particles are placed(S230); and allowing the Te-based nanoparticles to react to the Ag particles to obtain Ag doped Te-based nano-materials(S240).;COPYRIGHT KIPO 2010
机译:目的:提供一种利用脉冲激光烧蚀和汽-液-固法制造掺银Te基纳米材料的方法,以促进掺银Te基纳米材料在普通基板上的生长。一种制备掺Ag的Te基纳米材料的方法,包括以下步骤:准备一个装有Te基块状靶材的烧蚀室(S210);向Te基体靶照射能量束以生成Te基纳米颗粒(S220);将载气供应到消融室中,并将产生的基于Te的纳米颗粒转移到放置有Ag颗粒的热处理单元中(S230);并允许Te基纳米颗粒与Ag颗粒反应以获得掺杂Ag的Te基纳米材料(S240)。; COPYRIGHT KIPO 2010

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