italic depth of atoms by ion implantation direction uniform distribution methods

摘要

A method for distributing a film uniformly in a longitudinal direction of an atom is provided to reduce ion implantation time by implementing uniform distribution through a single process. A desired thickness for ion implantation is selected. Ion beam energy and incident angle are calculated in accordance with the selected thickness for ion implantation. Irradiation dose requested for ion etching in implanting the calculated ion beam energy at the incident angle is calculated. Element composition for ion implantation is determined through electronic simulation of ion implantation and ion etching.