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Semiconductor element having a small-ε metallization layer stack with enhanced electromigration resistance and method of forming the semiconductor element
Semiconductor element having a small-ε metallization layer stack with enhanced electromigration resistance and method of forming the semiconductor element
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机译:具有增强的电迁移电阻的小ε金属化层堆叠的半导体元件及其形成方法
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摘要
A technique is disclosed which enables the formation of a metallization layer being substantially comprised of a low-k dielectric material, wherein a compressive stress layer provides enhanced electromigration behavior of the metallization layer. In particular embodiments, a compressive silicon dioxide layer may be formed on or in the vicinity of a dielectric barrier layer and a metallization layer based on SiCOH.
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