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A method for producing a memory structure

机译:一种产生存储器结构的方法

摘要

The invention relates to a method for producing a memory structure, which is in the form of a lines sequence of electrically conductive polymers on a substrate is printed, wherein the memory structure is produced first in advance, in that in the coding regions of the lines of the sequence are provided for the subsequent coding of an electrically conductive state in an electrically non-conductive state can be brought, and then selected coding regions in the subsequent coding in a function of the information to be stored in a contactless manner which is coupled by high frequency high voltage and / or - by means of uv light from an electrically conductive state in an electrically non-conductive state are converted.
机译:存储器结构的制造方法技术领域本发明涉及一种存储器结构的制造方法,该存储器结构以线的形式印刷在基板上的导电聚合物,其中,首先在线的编码区域中首先制造存储器结构提供序列中的序列,用于可以随后对处于非导电状态的导电状态进行编码,然后根据要存储的信息的功能在随后的编码中选择编码区域,该信息以非接触方式存储。通过高频高压和/或-通过uv转换来自非导电状态的导电状态的光。

著录项

  • 公开/公告号DE102007030308A1

    专利类型

  • 公开/公告日2009-01-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20071030308

  • 发明设计人

    申请日2007-06-29

  • 分类号H01L21/8246;H01L27/112;H01L27/28;H01L51/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:45

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