Power semiconductor device comprises an internal capacitor between an internal gate electrode and an electrode, a monolithically integrated auxiliary condenser, an internal gate resistor, a vertical drift zone, and a lateral drift zone

摘要

The power semiconductor device (1) comprises an internal capacitor between an internal gate electrode (28) and an electrode (29), a monolithically integrated auxiliary condenser (4) arranged between the internal gate electrode or an external gate connector and the electrode, an internal gate resistor (3) arranged between the internal gate electrode and the external gate connector, on which the gate resistor is gripped from outside, a vertical drift zone, and a lateral drift zone. The auxiliary condenser has a monolithically integrated auxiliary capacitor, and condenser surfaces. The power semiconductor device (1) comprises an internal capacitor between an internal gate electrode (28) and an electrode (29), a monolithically integrated auxiliary condenser (4) arranged between the internal gate electrode or an external gate connector and the electrode, an internal gate resistor (3) arranged between the internal gate electrode and the external gate connector, on which the gate resistor is gripped from outside, a vertical drift zone, and a lateral drift zone. The auxiliary condenser has a monolithically integrated auxiliary capacitor, a first condenser surface, which is connected with the internal gate electrode, and a second condenser surface, which is connected with the electrode. A dielectric layer is arranged between the condenser surfaces. The auxiliary capacitor is less than, greater than or equal to the internal capacitor at a drain source voltage, which is less than or greater than the source drain voltage, which is twentieth and half of the breakdown voltage. The first condenser surface from electrically conductive material covers corner areas and edge areas of a semiconductor chip and electrically connects with the internal gate electrode over a contact wire connector. The first condenser surface has a horizontal field plate, which lies at gate electrode potential. The second condenser surface is formed from a drift-line material of the corner areas and edge areas of the chip, is arranged beneath the field plate and has a highly-doped subsurface zone having same line-type as the drift-line material. The subsurface zone has an inner edge, which is directed in the direction of a central cell region of the chip and has an area with varied lateral doping (VLD). The dielectric layer is arranged on a top side of the chip and has a thickness, whose electrical voltage stability is larger than the breakdown voltage of the device. The thickness (w) of the dielectric layer varies below the field plate. The gate electrode is an insulating gate electrode of metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), where the electrode is a drain electrode of the MOSFET and/or a collector electrode of the IGBT. An independent claim is included for a method for manufacturing semiconductor chips.